不同单晶硅衬底的多孔硅的拉曼和光致发光谱研究

Study on Raman-and Photoluminescence-Spectra of Porous Silicon Formed on Different Si Substrates

用拉曼谱和光致发光谱研究了不同掺杂类型和掺杂浓度的单晶硅衬底上制备的多孔硅（ＰＳ）．根据拉曼谱估计了不同衬底ＰＳ的硅残留体的尺寸，结果与其它实验的结论相符．把由拉曼谱得到的ＰＳ尺寸和由光致发光谱得到的ＰＳ荧光峰能量相对比，发现单纯的量子限制模型不能统一解释不同衬底ＰＳ的光发射现象．

Abstract Using Raman-and photoluminescence-(PL)spectra,we studied porous silicon (PS) formed on Si substrates of different doping type and doping concentration.Using Raman spectra, we estimated the average size of St walls of PS formed on different substrates, the results agree to some other experiments. Comparing the sizes of PS walls with the energies of PL peaks on PL spectra, we considered the quantum confinement model (QCM) cannot unifiedly explain the light-emitting phenomena of PS on different substrates.