摘要
为了设计具有最小寄生晶闸管发射结分流电阻Ｒｐ的大电流ＩＧＢＴ，针对圆形、方形、条形等发射极图形设计．建立了Ｒｐ的计算公式模型，并据此讨论了在各种图形设计中的Ｒｐ与ｐ阱高浓度深层扩散的结深和表面杂质的关系，以及图形及其尺寸对Ｒｐ大小的影响．
Abstract Designing high current IGBT with minimum emitter shunting resistance of parasitic thyristor, we have established models of shunting resistance for different cell geometries. The function relationships between the shunting resistance and the junction depth and the surface concentration of p+-deep-diffusion in the p-well are discussed based on the models. The effects of cell geomitry and cell size on shunting resustance are investigated as well.
