摘要
在ＣＭＯＳ／ＳＩＭＯＸＳＯＩ电路制作中引入了自对准钴（Ｃｏ）硅化物（ＳＡＬＩＣＩＤＥ）技术，研究了ＳＡＬＩＣＩＤＥ工艺对ＳＯＩＭＯＳＦＥＴ单管特性和ＣＭＯＳ／ＳＯＩ电路速度性能的影响．实验表明，采用ＳＡＬＩＣＩＤＥ技术能有效地减小ＭＯＳＦＥＴ栅、源、漏电极的寄生接触电阻和方块电阻，改善单管的输出特性，降低ＣＭＯＳ／ＳＯＩ环振电路门延迟时间，提高ＣＭＯＳ／ＳＯＩ电路的速度特性．
Abstract The CoSi2 self-aligned silicide(SALICIDE) process for CMOS circuits on silicon insulator(SOI) has been developed with Co rapid thermal processing technology. SALICIDE process's influences on MOSFET's and CMOS circuits characteristics are studied. The experiments show that by using SALICIDE process, the MOSFET's contact resistance has been greatly decreased 9 thus output characteristics is improved. CMOS ring oscillator with a gate length of 1μm can operate at high speed with the delay time/stage of 230ps/stage at 5V.
