摘要
对单晶硅进行Ｃ＋注入，注入能量为５０ｋｅＶ，注入剂量为１×１０１５～１０１７／ｃｍ２．在Ｎ２中经９５０℃退火１小时后，注入层形成尺寸为１～３μｍ的β－ＳｉＣ沉淀．进而采用电化学腐蚀方法将样品制成多孔结构．在紫外光激发下，样品可以发射强度较大的蓝光，光强是通常多孔硅的数倍以上，谱峰处于４８０ｎｍ和５０５ｎｍ附近．这一方法简便有效地实现了硅基材料的蓝光发射．
Abstract Carbon ions were implanted into single crystal silicon wafers at an energy of 50 keV and with doses ranging from 1×1015 of 1×1017/cm2. The precipitation of β-SiC was occurred beneath the surface of the samples thermalty annealed in N2 at temperature of 950℃ for 1 hour. Porous structure of sample was prepared by conventional anodized oxidation. Under ultraviolet excitation, the samples have intensive blue emission peaked at 480um and 505um, and the intensity is several times stronger than that of the common porous silicon. This is an effective method to produce Si-based blue emission materials.
基金
国家自然科学基金
