摘要
本文报道了利用分子束外延技术在ＧａＡｓ（２１１）Ｂ衬底上生长Ｈｇ１－ｘＣｄｘＴｅ／ＣｄＴｅ异质结，并通过ＶａｎｄｅｒＰａｕｗ（ＶｄＰ）方法测量Ｐ－Ｈｇ１－ｘＣｄｘＴｅ外延薄膜在不同温度及磁场下Ｈａｌｌ系数和电导率，采用最小二乘法对实验数据下行拟合，得到了混合导电机制下电子、重空穴和轻空穴的迁移率及载流子浓度．
Abstract CdTe/Hg1-xCdxTe heterostructure materials grown on GaAs (211)B by MBE are reported. Temperature and magnetic-field dependences of a Hall coefficient and conductivity of p-type Hg1-xCdxTe epitaxial films are determined by Van der Pauw method. The mobility and carrier concentration such as electron,heavy and light hole are gained through the least Square fitting.
