摘要
利用金属蒸汽真空弧（ＭＥＶＶＡ）离子源引出强流Ｔｉ离子注入单晶硅，当ＭＥＶＶＡ源引出电压为４０ｋＶ，束流密度达到１００μＡ／ｃｍ２，Ｔｉ离子剂量为５×１０１７／ｃｍ２，Ｔｉ离子注入单晶硅可得到Ｃ５４－ＴｉＳｉ２的注入层，且薄层电阻低于３．０Ω／□．本文用束流热效应讨论了形成硅化物的机理．
Abstract TiSi2 was formed by Ti ion implantation into S2(100) and S2(111). Ti ions were extracted from a Metal Vapor Vacuum Arc (MEVVA) ion source at 40 kV with high current density. When the ion current density was up to 100μA/cm2 to a dose of 5×1017/cm2,XRD,RBS and four point probe measurements revealed that C54-TiSi2 with a low sheet resistivity (below 3.0Ω/□) was formed.
