摘要
本文利用变温光反射谱和室温光伏谱研究了赝高电子迁移率晶体管结构中二维电子气的行为，发现二维电子气的屏蔽作用对低指数子带较为显著，而对较高子带则弱得多，同时带填充效应在不同温度下对临界点跃迁能量及跃迁强度也有不同影响．
Abstract Using Photoreflectance spectra and photovoltaic spectra,we have studied the behavior of two dimensional electron gas in pseudomorpic high electronic moblity transistor structures.We find that the screening effect of two dimensional electron gas on lower index subbands is more significant than that on higher indea subbands. Meantime, bandfilling effets have different influence on the transition energy and strength of critical points at high temperatures and low temperatures.
