摘要
对乙烯基三乙氧基硅烷工业品进行了GC -MS分析 ,发现其中含有甲基三乙氧基硅烷 (I)和1,3-二乙烯基 - 1,1,3,3-四乙氧基二硅氧烷等杂质 ,主要杂质为化合物I ,占 3 2 7%。理论分析认为 :在三氯氢硅与氯乙烯的高温热缩合反应中发生的副反应产生了甲基三氯硅烷 ,它进一步与乙醇反应生成化合物I ;
s:Analysis of the commercial sample of vinyltriethoxysilane was made by means of GC-MS,the result showed that there were methyl triethoxysilane (I), 1,3-divinyl-1,1,3,3-tetraethoxydisiloxane, etc., as impurities, and (I) was the main impurity with a content of 3 27%. It was argued that methyl trichlorosilane, which could reacted with ethyl alcohol to create (I), was formed as a byproduct in the high temperature condensation of trichlorosilane with vinyl chloride, and methods to decrease the content of the impurities were suggested also.
出处
《有机硅材料》
CAS
2001年第2期21-23,27,共4页
Silicone Material
