Ge_xSi_(1-x)/Si异质结器件的研制现状

Recent Development of Ge_xSi_(1-x)/Si Heterojunction Devices

介绍了应变层Ge_xSi_(1-x)/Si异质结构的生长、材料特性及其在异质结双极晶体管(HBT)、双极反型沟道场效应晶体管(BICFET)、调制掺杂场效应晶体管(MODFET)、谐振隧道二极管、负阻效应晶体管(NERFET)、毫米波混合隧道雪崩渡越时间(MITATT)二极管和光电探测器等器件中的应用状况,并指出了其发展前景。

This paper describes the growth of strained Ge_xSi_(1-x)/Si layers,characteristics of the materials and also their applications in heterojunction bipolar transistors (HBT), bipolar inversion-channel FET (BICFET), modulation doped field effect transistors (MODFET), resonant tunnelling diodes, millimetre-wave mixed tunnel-avalanche transit-time (MITATT)diodes, negative resistance FET (NERFET)and optical detectors as well. Their development propects are also given.