摘要
本文概述了金刚石的材料特性、金刚石晶体管的结构和工艺。预计金刚石微波功率晶体管可在10GHz下,连续输出功率200W,在100GHz下,连续输出1W。
This paper briefly describes the material characteristic of diamond,structure and technology of diamond transistor. It is estimated that the 200W output power at 10GHz and 1W output power at 100GHz will be obtained for diamond microwave power transistor
出处
《半导体情报》
1992年第6期28-34,共7页
Semiconductor Information
