摘要
论述了 ITO膜的导电及生长机理 ,讨论了离子辅助 ( IAD)电子枪蒸镀 ITO膜的方法中 ,膜的组分、氧分压、衬底温度和蒸发速率等几个参数对 ITO膜光电性能的影响 ,在选择合适的工艺条件下制备ITO膜 ,电阻率约 3× 1 0 - 4 Ω· cm,可见光平均透过率高于 80 %。并用原子力显微镜 ( AFM)
WT5BZ]In addition to describing the conduction and growing mechanism of ITO films, the paper also discusses the influence of the ratio of indium to tin, the oxygen partial pressure, the substrate temperature and the evaporation rate on electrical and optical properties of the ITO films prepared by ion aided deposition. Under the optimized preparation conditions, electrical resistivity is about 3.0×10 -4 cm, and the average visible transmittance is better than 80%. By an atomic force microscope, the surface of the film had been examined. [WT5HZ]
出处
《光学精密工程》
EI
CAS
CSCD
2001年第2期169-173,共5页
Optics and Precision Engineering
基金
高等学校重点实验室访问学者基金资助
关键词
离子辅助沉积
ITO膜
电子束
氧空位
原子力显微镜
ITO films
ion aided deposition
oxygen vacancies
vapour partial pressure
atomic force microscopes
