摘要
We analyzed the structure of buried interface of BBDMS PPV/ITO system using a high resolution ADXPS technique. A transitional layer structure, whose chemical composition, state and valence band changed gradually from BBDMS PPV surface of film to substrate ITO, was observed. It was found that O 2- ion from ITO diffused into polymer film, interacted with back bone carbon and formed the carbonyl bonding which could possibly constructed the channel of the carrier on the heterointerface. Indium of ITO also diffused into BBDMS PPV layer and In(OH) 3 was formed during diffusion. The diffusion and reaction between PPV/ITO interface may affect the performance of PLED significantly.
We analyzed the structure of buried interface of BBDMS PPV/ITO system using a high resolution ADXPS technique. A transitional layer structure, whose chemical composition, state and valence band changed gradually from BBDMS PPV surface of film to substrate ITO, was observed. It was found that O 2- ion from ITO diffused into polymer film, interacted with back bone carbon and formed the carbonyl bonding which could possibly constructed the channel of the carrier on the heterointerface. Indium of ITO also diffused into BBDMS PPV layer and In(OH) 3 was formed during diffusion. The diffusion and reaction between PPV/ITO interface may affect the performance of PLED significantly.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第5期836-838,共3页
Chemical Journal of Chinese Universities
基金
国家自然科学基金! (批准号 :2 9875 0 13 )资助
