摘要
以硅烷 (SiH4 )和硼烷 (B2 H6)为气相反应先驱体 ,采用等离子体增强化学气相沉积法 (PECVD)制备出轻掺硼非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明 ,一定程度的硼掺杂提高了非晶氢硅薄膜的电导率 ,降低了非晶氢硅薄膜的光、暗电导比 ,并促进了非晶氢硅薄膜中硅微晶粒的生长。红外吸收谱研究预示了大量的硼原子与硅、氢原子之间能形成某些形式的复合体 ,仅有少量硼元素对P型掺杂有贡献。
Using hydrogen\|diluted SiH 4 and B 2H 6 as the precursor gases, boron lightly doped amorphous silicon films were obtained by the plasma\|enhanced chemical vapor deposition. According to the results from X\|ray diffraction, Atom Force Microscopy(AFM) and photo/dark photoconductivity measurements, lightly doping of boron increases the dark conductivity, decreases the photo/dark ratio and enhances the crystallization in amorphous silicon films. Results from FTIR confirm that various kinds of complex were formed among boron, silicon and hydrogen atoms. Only a small amount of boron atom act as acceptor.
出处
《材料科学与工程》
CSCD
北大核心
2001年第1期30-33,16,共5页
Materials Science and Engineering
基金
国家自然科学基金!(No .6 9890 2 30 )
浙江省自然科学基金!(No .6 980 47)资助
