不连续[NiFe/Ag]_n多层薄膜低场巨磁阻研究

Studies of Low Field GMR Discontinuous Multi-layers of [NiFe/Ag]_n

用直流磁控溅射和快速真空磁场退火工艺在玻璃基片上制备了 [NiFe/Ag]n不连续多层膜。从理论上分析了不连续膜低响应、高磁电阻值的机制 ,不连续膜模型介于多层膜模型及颗粒膜模型之间。研究了工艺条件 ,即退火温度、退火时间及空间层Ag厚度对不连续膜巨磁电阻特性的影响 ,并对工艺条件进行了优化 ,在常温下获得巨磁电阻值 13% ,饱和场Hs<80 0A/m ,磁场灵敏度 1 3% / 80Am-1的优质薄膜材料。

Discontinuous NiFe/Ag multi layers were grown on glass substrates with dc magnetron sputtering and rapid annealing.The possible mechanisms of the low saturation field and a rather high magneto resistance ratio of the discontinuous multi layers were theoretically analyzed.The influence of various factors,such as the annealing temperature,the annealing time and the thickness of the spacing Ag layer,on the giant magneto resistance (GMR) characteristics,was discussed to optimize GMR multi layer growth.Excellent multi layers of [NiFe/Ag] n were grown at room temperature with a GMR ratio of 13%,a low saturation field less than 800 A/m and a field sensitivity of 1.3%/80 Am -1