生长MCT晶体的改进型Bridgman方法:ACRT-B

ACRT-B, A Modified Bridgman Technique Used in Crystal Growth of Hg_(1-x) Cd_xTe

本文介绍一种经改进的采用加速坩埚旋转技术的Bridgman方法(ACRT-B)及ACRT-B用于生长MCT晶体得到的重要结果。与传统Bridgman方法生长的晶体相比,ACRT-B生长的晶体的径向组份均匀性得到很大改善;有用组份的晶片较多;晶体的结晶度好;主晶粒数目减少。ACRT-B工艺中,影响晶体质量最重要的旋转参数是最大旋转速率,而保持在最大旋转速率的时间和停止时间及反向旋转对结果的影响都很小。

Compared with conventional Bridgman technique the modified Bridgman technique using Accelerated Crucible Rotation Technique (ACRT-B) for crystal growth of Hg_(1-x)Cd_xT_c) improves radial composition uniformity of the useful parts with suitable composition, better crystallinity and less main grains. Of all the ACRT-B parameters to affect the quality of crystals, the maximum rotation rate of crucible is the most important one. Relatively the time remaining at the maximum rotation rate, the stoping period and reverso rotation have little influence on the quality of MCT crystals.