摘要
介绍了近年来迅速发展的8～12μmGaAs-GaAlAs多量子阱红外探测器、InAsSb和InAs-Ga_(1-x)In_xSb应变超晶格材料和器件以及HgTe-CdTe超晶格材料的简单原理、特点及国外最新动态。预计在90年代它们将与HgCdTe材料和器件同样受到人们的关注与重视。
As Substitutes alternatives to HgCdTe for 8～12μm infrared material and detector, GaAs-GaAlAs multiquantum well superlattice detector, InAsSb and InAs-Ga_(1-x)In_xSb straind layer superlattice detector and HgTe-CdTe superlattice material have been developed in recent years. The simple explanation to the principle, the characteristics and the latest status of these detectors and materials are presented. It is expected that these materials will be in competition with HgCdTe for many applications.
出处
《红外技术》
CSCD
1991年第5期10-16,共7页
Infrared Technology
关键词
红外探测器
量子阱
材料
红外器件
HgCdTe GaAs-GaAlAs InAsSb and InAs-Ga_(1-α)In_xSb
HgTe-CdTe superlattice
Quantum well
