InSb混合红外焦平面工艺研究

Technology Study on InSb Hybrid Infrared Focal Plane Array (FPA)

InSb 光伏线列器件是以 n 型 InSb 为衬底,扩散 Cd 形成 p-n 结,经光刻、蒸电极、焊接等工艺制成。SiCCD 为表面 p 沟器件,可按延时积分(TDI)和多路传输(MUX)两种方式工作。在研制1×12、2×12、1×64、2×64元 InSb 光伏线列器件并与 SiCCD 进行互连的基础上,从开发64×64元 InSb 混合红外焦平面着眼,我们进行了64×16元 InSb 光伏面阵的研制,并在 InSb 面阵和 Si 上电镀 In 柱,用我们研制的 HDD-1型红外对准倒焊机进行了对焊,开展了背面辐照 InSb 混合红外焦平面的工艺研究。本文介绍了工艺实验状况,并对工艺实验中有关问题进行了讨论。

We have devoted to detector array technology and produced the photovoltaie InSb detector arrays including 1×12,2×12,1×64 and 2×64 arrays for a few years.The SiCCDs are the surface p-channel devices which can operate in time delay integration (TDI) or multiplexer (MUX) mode.By combining PV InSb arrays with SiCCDs,a series of InSb FPAs have been developed,64×16 PV InSb arrays are also fabricated,Both the detector arrays and SiCCDs plate Indium bumps then are bonded with HDD-1 IR Flip- Chip Alignment-Bonder made in our lab.to form backside illumination InSb hybrid IRFPAs successfully.All the studies will serve 64×64 InSb IRFPA. The state-of-the art and the details of technology are presented.