In_(0.15)Ga_(0.85)As/GaAs多量子阱子能带跃迁压力效应

EFFECT OF PRESSURE ON THE INTERSUBBAND TRANSITIONS IN STRAINED In_(0.15)Go_(0.85)As/GaAs MULTIPLE QUANTUM WELLS

用光调制吸收光谱方法在不同压力条件下研究了In_(0.15)Ga_(0.85)As/GaAs应变多量子阱的子能带跃迁,发现子能带跃迁能量随压力的变化行为与构成量子阱的组成体材料带间跃迁能量的变化相似,并且子能带跃迁能量压力系数与量子阱的宽度有关。还讨论了压力可能引起的导带不连续率的变化和In_(0.15) Ga_(0.85)As应变层的临界厚度。

The dependence of the intersubband transitions on pressure in strained In_(0.15) Ga_(0.85)As/GaAs multiple quantum wells has been studied in two samples with well widths of 8nm and 15nm, respectively, with photo- modulated transmission spectros copy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions have been found to depend significantly on the well widths and be smaller than that of the band gap of constituents in bulk form. These results suggest that the critical thickness for strained In_(0.15)Ga_(0.85)As/GaAs layer should be smaller than 15nm.