光调制反射谱用于研究MBE GaAs_(1-x)Sb_x/GaAs外延膜

USE OF PHOTOREFLECTANCE SPECTROSCOPY IN THE STUDY OF GaAs_(1-x)Sb_x/GaAs EPITAXIAL LAYER

本文讨论了量子阱的光调制反射谱(PR)线形,并采用光调制反射谱研究了MBE GaAs_(1-x)Sb_x/GaAs异质结、应变层量子阱。可见,用PR谱研究MBE外延膜具有一定的优越性。

Photoreflectance (PR) lineshapo of quantum wells is discussed simply. The MBE GaAs_(1-x)Sb_x/GaAs hotorostructures and strained layer multiple quantum wells have been investigated by means of PR measurement. The advantages of the photoreflectance spectroscopy in the study of MBE epitaxial film are found in this paper.