离子注入SOI材料的红外吸收谱分析

INFRARED ABSORPTION SPECTROSCOPIC STUDIES OF SOI STRUCTURES FORMED BY ION IMPLANTATION

用傅里叶红外吸收谱对不同热处理条件下的SOI样品进行了系统的分析,结果表明:对于190keV,1.8×10^(18)/cm^2N^+注入的样品,在低于1100℃的温度下退火可保持氮化硅埋层的无定形态,而～1200℃热退火则导致氮化硅埋层的结晶成核现象。对于200keV,1.8×10^(18)/cm^2O^+注入的样品,氧化硅埋层的形成是连续渐变的,注入的氧化硅埋层向常规的热氧化非晶态SiO_2转变的激活能为0.13eV。

Infrared absorption spectra have been measured for SOI structures after various thermal annealing treatments. By infrared absorption and thermodynamic analyses, it has been found that crystalline α-Si_3N_4 can be formed in the buried nitride layer of SOI structure after annealed at 1200℃ for 2h. However, the buried layer formed by oxygen implantation is amorphous SiO_2 after annealed at different temperatures. The activation energy of the transformation of buried oxide layer into thermally oxidized SiO_2 is 0.13eV.