扩展长波红外探测的铱硅化物硅肖特基势垒的研究

STUDY ON IRIDIUM SILICIDE-SILICON SCHOTTKY BARRIER USED FOR DETECTION OF INFRARED RADIATION EXTENDED TO LONGER WAVELENGTHS

通过制备铱硅化物—硅肖特基势垒,分析了衍射相,讨论了铱硅化物成膜工艺及其与薄膜方块电阻的关系,测量并分析了势垒高度,红外光吸收率。研究结果表明,铱硅化物—硅是一种有希望扩展肖特基势垒红外探测范围的新型势垒结构。

The iridium silicide-silicon Schottky barrier has been fabricated and the diffraction spectra of samples are analyzed. The formation process of iridium silicide and the relation between the process and square resistance of the film are discussed. Schottky barrier height and infrared absorptivity are measured and analyzed. The results show that the iridium silicide-silicon barrier is a new type of structure expected to be used in detecting infrared radiation extended to longer wavelengths.