摘要
研究了顺次淀积在 Si (10 0 )衬底上的 Ni/ Pt和 Pt/ Ni的固相硅化反应 .研究发现 ,当 1nm Pt作为中间层或覆盖层加入 Ni/ Si体系中时 ,延缓了 Ni Si向 Ni Si2 的转变 ,相变温度提高 .对于这种双层薄膜体系 ,80 0℃退火后 ,XRD测试未检测到 Ni Si2 相存在 ;85 0℃退火后的薄膜仍有一些 Ni Si衍射峰存在 . 80 0℃退火后的薄膜呈现较低的电阻率 ,在 2 3— 2 5 μΩ· cm范围 .上述薄膜较 Ni/ Si直接反应生成膜的热稳定性提高了 10 0℃以上 .这有利于Ni Si薄膜材料在 Si基器件制造中的应用 .
The solid phase silicidation has been studied,which occurs in the thin films of Ni/Pt and Pt/Ni sputtered sequentially on Si(100) substrate.The results show that the phase transformation from NiSi to NiSi 2 is delayed by the addition of 1nm Pt to the Ni/Si system as a capping- or an inter-layer,and the phase transformation temperature has increased.As to the bilayered thin film system,XRD spectra indicate that there exists no NiSi 2 phase after annealing at 800℃,but some diffraction peaks corresponding to NiSi after annealing at 850℃.Annealed at 800℃ the film has a relative low resistance of 23—25μΩ·cm.Compared with the NiSi film obtained by direct reaction of Ni with Si substrate,the thermal stability of the above-mentioned film is increased by about 100℃ above,which favors the application of NiSi in the fabrication of Si-based devices.
基金
国家自然科学基金!资助项目 (6 9776 0 0 5 )&&
