摘要
当 X射线射入不同材料组成的界面时 ,在低 Z材料的一侧将产生剂量增强。介绍了界面剂量增强效应的基本原理 ,并用 MCNP Monte- Carlo程序计算了钨 -硅、钽
The dose is enhanced in low Z material when X ray enters the interface which is constructed with different materials. The mechanic of dose enhancement is introduced in this article, and the dose enhancement factor of W Si, Ta Si interface are calculated.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2001年第3期208-210,共3页
Nuclear Electronics & Detection Technology