X射线在重金属-硅界面的剂量增强系数的计算

Calculation of the dose enhancement factor to W-Si and Ta-Si interface

当 X射线射入不同材料组成的界面时 ,在低 Z材料的一侧将产生剂量增强。介绍了界面剂量增强效应的基本原理 ,并用 MCNP Monte- Carlo程序计算了钨 -硅、钽

The dose is enhanced in low Z material when X ray enters the interface which is constructed with different materials. The mechanic of dose enhancement is introduced in this article, and the dose enhancement factor of W Si, Ta Si interface are calculated.