摘要
本文报道了用低能大面积电子束处理注砷硅片的实验结果。由四探针和背散射、沟道效应测量结果表明,用本方法退火的样品具有电激活率高和砷原子再分布小的优点。
As-implanted silicon wafers are irradiated transiently using a large area low energy electron beam. The results on sheet resistivity and RBS/channeling experiment indicate that the electrical activation of the dopants is almost 100% complete. In contrast with the conventional furnace annealing, better recovery of the implantation damage is obtained and the dopant redistribution is weakened.
出处
《核技术》
CAS
CSCD
北大核心
1990年第1期9-13,共5页
Nuclear Techniques
