能带的立方对称哈密顿量对零禁带半导体材料的动力学介电常数的影响

Contribution of the Cubic Term of Energy Band Hamiltonian to the Dielectric Function in Zero Gap Semiconductors

本文讨论了零禁带半导体材料的能带立方对称哈密顿量对动力学介电常数的影响,用了微扰论的方法将立方对称项看成微扰项进行计算,结果表明:立方对称项的一阶微扰和高阶微扰计算不改变零禁带半导体的介电常数奇异性质。修正量在5～10%之间,其大小视材料而定。

Contribution of the cubic term of enery band hamiltonian to the dynamic dielectri function in zero gap semiconductors has been calculated with the pertubrbation method. The calculation shows that the first order and the higher order perturbations of he cubic term or the hamiltonian do not change the singularity of the dielectric funtion of the zero gap semiconductors.The quantative correction to the dielectric function is about 5—10% for various materials.