InGaAsP/InP多薄层异质结构材料的晶格驰豫和晶体质量蜕化研究

The Research on the Lattice Relax and Crystal Degeneration of InGaAsP/InP Multilayer Heterostructure Materials

介绍应变量子阱材料的稳定性理论——能量平衡模型；报告几个典型的与晶体质量蜕化有关的光荧光谱；计算几种常用应变多量子阱结构材料的临界弹性应变量；指出非应变盖层可提高阱层临界应变量；

The energy equilibrium model—The stability theorem on the strained quantum well structure materials have been introduced in the paper. Some typical photoluminescence spectrum related to the crystal quality degeneration also have been reported. They calculated the critical elasticity stress of some ordinary strained multiquantum well structure materials, and pointed out that the in strained cap layer will increase the critical stress of well layers. The difference between the allowed stress in fact and the calculated one have been discussed for the first time.