摘要
利用XPS研究了CsI/Ni薄膜系统的深度剖面分布,研究结果指出:CsI膜在20～200℃的温度范围内是热稳定的,而且CsI膜厚度随烘烤温度增加而增加。由于Ni扩散至CsI层内,CsI/Ni紫外光电阴极长波阈向长波延伸。
The depth profiles of CsI/Ni thin film systems have beenstudied by using XPS. Our study shows that the CsI films are of thermalstability in temperature range 20～ 200℃, and the thickness of the CsIfilms inereases with the baking temperature. Because the Ni has diffusedinto the CsI layer,the wavelength threshold of the CsI/Ni ultraviolet pho-tocathode is extended to longer wavelength.
