C波段GaAs功率场效应晶体管可靠性快速评价技术

Rapld Estimation Technology of CaAs Power FET Reliability in C-Band

叙述了一种快速评价ＧａＡｓ微波功率场效应晶体管的方法——高温加速寿命试验，利用该方法对Ｃ波段ＧａＡｓ功率场效应晶体管ＤＸ００１１进行可靠性评估。在偏置Ｖ＿（ＤＳ）＝８Ｖ，Ｉ＿（ＤＳ）＝３７５ｍＡ，沟道温度Ｔｃｈ＝１１０℃，１０年的失效率λ≈２７ＦＩＴ。其主要失效模式是Ｉ＿（ＤＳＳ）退化，激活能Ｅ＝１．２８ｅＶ。

This Paper introduces a way of rapidly estimating GaAs microwave power FET-high temperature accelerated life tests.It's used to estimate the reliability of GaAs power FET DX0011. When the bias V_(DS) is 8V,I_(DS) is 375mA,and the channel temperature T_(ch) is 110 ℃, the failure rate for ten years is 27 FIT. The main failure mode is I_(DSS) degradation. Activation energy E is about 1.28eV.