摘要
本文论述了具有垂直沟道、多单元结构的高电压、大电流功率MOS场效应晶体管(VDMOSFET)的设计理论及方法.并从四个方面阐述了其结构特点,提供了具体设计参数及部分二维数值分析结果.
This paper deals with the theory and structure design for power VDMOSFET of high voltage and heavy current. To increase the breakdown voltage, the peripheral structure with field plate and field limiting ring is used. The Poisson's equation of peripheral zone is solved by 2D numerical analysis. The effect of structural parameters on the distribution of electrical field intensity and potential are analyzed and optimum structural parameters are determined. The power MOSFETS with BV DS≥500V,Rom≤5Ω,IDS≥1A and VT=2V^4V have been fabricated.
出处
《华中理工大学学报》
CSCD
北大核心
1991年第5期115-120,共6页
Journal of Huazhong University of Science and Technology
关键词
VDMOSFET
半导体器件
结构设计
Vertical double diffused metal-oxide-semiconductor field effect transistor(VDMOSFET)
Breakdown voltage
On-state resistance
Field plate
Field limiting ring
