离子束混合生成钼硅化物的生长动力学

THE GROWTH KINETICS OF MO SILICIDE INDUCED BY ION BEAM MIXING

离子束混合(IM)形成铝硅化物的过程中,相的生成及相结构的转变与注入及后退火过程中外界给系统所提供的激活能有关。衬底加温IM时,钼硅化物的生长厚度与注入剂量的平方根成正比(x∝(?)^(1/2));理论分析表明,其生长规律与注入过程的能量淀积密度Δ_v有关,当Δ_v很大时x∝(?)^(1/2),当Δ_v较小时x∝(?)。而且,扩入Mo膜中的氧杂质会明显降低铝硅化物的生长速率。

During the growth of Mo silicide induced by ion-beam-mixing (IM),the phase formation and structure translation are dependent on the activation energy supplied by ion implantation and post-annealing. When implanted with substrate heating, the growth thickness of Mo sillcide is proportional to the square root of bombarding dose(x∝(?)^(1/2)). By theoretic analysis. We found that it's growth rule is related with energy deposited density Δ_v. When Δ_v is very large,x∝(?)^(1/2). When Δ_v is small x∝(?). And the oxygen impurity diffused inward Mo layer will slow down the growth rate of Mo silicide.