金属/n型半导体(Au/n-Ga N)肖特基势垒的研究(英文)

Study on Au Metal/n-type Semiconductor GaN Schottky Barrier

材料 Au/ n Ga N在 60 0℃温度淬火后 ,利用电流 -电压测量、XPS谱研究金 Au和 n型 Ga N半导体形成的接触势垒。电流 -电压测量得到肖特基势垒平均高度和理想因子分别为 1 .2 4 e V、1 .0 3,理想因子为 1 .1 2的势垒最大高度为 1 .35e V。 XPS数据表明 :60 0℃温度的淬火导致能带向上弯曲 0 .35e V,随着金的沉积在同一方向产生进一步的能带弯曲 0 .2 5e V。我们的结论可以用 Cowley-Sze模型来解释 ,结论表明 :在 Ga

Gold Schottky contacts formed in situ on n-type GaN after a 600℃ anneal have been characterized by current-voltage (I - V) measurements and x-ray photoelectron spectroscopy (XPS). The mean Schottky barrier height and lowest ideality factor were found to be 1.24eV and 1.03, respectively, as measured by (I - V). The highest barrier measured was 1.35eV with an ideality factor of 1.12. XPS data showed that the 600 ℃anneal produced an upward band bending of 0.35eV, the subsequent gold deposition caused a further band bending of 0.25eV in the same direction. Our results can be interpreted in terms of the Cowley-Sze model and suggest a high density of acceptor states at the bare GaN surface.