摘要
本文就几种不同的线宽计算了准一维ＧａＡｓ量子线中施主杂质的光致电离截面。
The photoionization cross section of donor impurities in quasi one dimensional GaAs quantum well wire as a function of photon energy is calculated for different wire widths. The influences of the uniform magnetic field, applied along the axis of the wire, on the optical spectrum are also investigated.
基金
广东省自然科学基金
关键词
光致电离截面
量子线
施主杂质
photoionization cross section
quantum well wire
donor impurity.
