摘要
本文报告掺铒光纤放大器增益随温度变化的效应,提出了一个解释这一效应的数学模型。此模型基于如下假设:由于温度的变化,引起处在基态和激发态的stark能级上的掺铒离子(Er(3+))浓度的重新分布,从而引发光纤发射截面和吸收截面的变化。理论结果和实验结果符合很好。
In this paper, the authors report the experiments of temperature dependence of erbiumdoped fibre amplifier gain and present a mathematical model to explain the temperature depen dence. The model is based on the assumption that temperature affects the emission and absotption cross-sections of the fibre due to the redistribution of dopant concentrations on the Stark energy levels of the ground and excited states. Results form the model agree well with measuring results.