InGaAsP多量子阱结构激光器阱数设计与制备

The Choice of Well Number and Fabrication of InGaAsP Multiquantum-well Laser Diodes

针对目前多量子阱激光器结构设计中，忽略了载流子在每个阱内的注入不均匀性的问题，从油松方程和电流连续方程出发，提出每个阱单独考虑的计算方法，从而比较精确地计算出多量子阱激光器的净增益，给出多量子阱激光器的最佳阱数选择，根据设计结果，生长了ＩｎＧａＡｓＰ分别限制量子阱结构．利用质子轰击制得条形量子阱激光器，实现室温连续工作．阈值电流为６０ｍＡ，激射波长为１．５２μｍ，单面输出外微分量子效率为３６％．

The nonuniformity of carrier injected to each well was unreasonably neglected in conventional structure design of multiquantum well laser diode. This paper reports an optimization method by calculating separately the contribution of carrier injection of each well to the total net gain for the first time, based on Poisson's equation and continuity. A optimal choice of well number has been therefore given. According to the theoretic results, InGaAsP multiquantum well structure has been grown. The threshold current of the laser diode with proton-bombardment stripe confinement is 60 mA under cw operation, emitting at 1. 52μm. The external differential quantum efficiency of single facet is measured to be 36%.