一种非接触标识存储器读写电路的改进

Improvement of the Circuit for a Kind of Contactless ID Memory Reader

根据非接触式存储器的读写原理 ,对读写器电路作了改进 ,适当增加了磁场强度 ,在设计读写器天线时充分考虑读写器天线线圈与非接触式存储器线圈间的耦合因子 ,优化了天线设计 ,提高了接收灵敏度 ,延长了读写距离 .

An improved circuit for the contactless TK5550 memory reader is introduced in this paper. According to the theory about electromagnetic field strength,the optimized radius of the antenna is discussed.The circuit could extend in effect the operating distance between the contactless IC memory and the antenna of the reader,and it is economical.