摘要
本文用耦合速率方程,从理论上分析研究了超辐射发光二极管(SLD)的功率输出特性。主要讨论了腔面反射率对其功率输出特性的影响。研究结果表明,半导体激光器(LD)存在一最佳输出功率腔面反射率,随腔面反射率的降低,SLD的功率曲线斜率减小,输出功率降低,光谱调制深度减小。增大后腔面反射率可以提高SLD的输出功率,减小其工作电流。由于腔面反射率的降低,前后传输的光子在有源区内的分布的对称性发生了变化,表现为非均匀性,后向传输波大于前向传输波。最后,把理论计算结果同我们研制的1.3μm徐层结构超辐射发光二极管的实验结果作了比较,得到了较好符合。
This paper demonstrates the relationship of the output characteristics and facet reflectivity of superluminescent diode (SLD). according to coupled rate equations. The theoretical calculationsshow that: (1 ) The semiconductor laser has a optimum Point of output power facet reflectivity. For aSLD, with the decreasing of facet reflectivity, the power curve slope, maximum output power and spectral modulation depth decrease too. (2) Increasing of back facet reflectivity can increase the output powerof SLD and reduce the operation current. (3) Because of the decreasing of the facet reflectivity, thenonuniform of carrier distribution is evident, the backward wave is obviously stronger than forwardwave. Finally. as a comparission, the experimental study has been made. The experimental results arewell in agreement with theoretical analysis.
出处
《激光技术》
EI
CAS
CSCD
1996年第3期168-173,共6页
Laser Technology
基金
国家教委博士点基金