摘要
作为宽带半导体材料的SiC及其器件制造技术近年来得到迅速发展。与其它半导体材料相比,SiC独特的热特性和电特性,在功率和频率性能方面具有很高的品质因数。SiC还适应高温和辐射环境。本文主要叙述SiC材料的特性、器件制作技术及其应用。
The SiC and its device manufacturing technology are quickly developing in the nearby years. As compared with other semiconductor materials, the SiC has the special thermal features and electrical characters, and has very high quality factor. The SiC also is suitable for high temperature and radiation environment. The paper maily describes the characteristic of SiC material, devices' s processing technology and its application.
出处
《电子元器件应用》
2001年第5期19-23,28,共6页
Electronic Component & Device Applications
