表面沉积钯层的n型硅光阳极特性的研究

STUDY ON THE CHARACTERISTCS OF PHOTOANODE OF SINGLE CRYSTAN n-Si ON WHICH DEPOSITED A THIN LAYER OF Pd

测量了n-si电极的光电流-电位特性曲线,从光腐蚀的角度研究了用恒电位脉冲法沉积钯对单晶n-si光响应的作用。讨论了光电流密度随Pd层沉积量的变化规律,测定了n-si/Pd电极的光极化特性曲线、光谱响应曲线及在强碱溶液中的稳定曲线。

Photocurrent-Potential characteristics of n-si electrode was measured. The effects of depositing Pd by potentiostatic pulse method on the surface of single crystal n-si were studied in the area of photocurrent response The change pattern of photo current density by the quantity of deposition was discussed The photo polarization and wavelength response of n-si/Pd electrode and the stability of the electrode in alikali solution were measured