摘要
本文利用连续波Ar^+激光和卤钨灯光对等离子体增强化学汽相淀积法(PECVD)淀积的未掺杂和掺磷的α-Si:H膜进行结晶。对于Ar^+激光辐照结晶情况由转靶X射线衍射分析和透射电子显微镜(TEM)分析表明,上述两种薄膜无明显差异,均呈现<111>择优取向,平均晶粒尺寸约数十微米。对于灯光结晶情况,在700℃/4min条件下,也均呈现<111>择优取向,但掺磷样品的结晶程度更强一些,X射线衍射峰更尖锐,相应的平均晶粒尺寸较大,达亚微米量级。
Plasma enhanced chemical vapor deposited (PECVD) a-Si:H films, undoped and phosphorus (P) doped, have been crystallized using CW Ar^+ laser irradiation or arc lamp rapid thermal annealing (RTA). In the case of Ar^+ laser crystallization, the results of X-ray diffraction spactra and transmission electron microscope (TEM) photographs show that crystallized films exhibit < 111 > preferred orientation and have average grain size about tens micrometer order of magnitude. And in the RTA situation, the samples are also crystallized with the < 111 > texture orientation. But the results of XDS indicate that the grain size of P doped sample is greater than that of undoped one and have submicron order of magnitude.
基金
南京大学分析中心测试基金
