摘要
因其设备简单、沉积速率高等特点 ,磁控溅射沉积技术被广泛地用于各种薄膜制备中 .但用反应磁控溅射制备化合物薄膜如氧化物、氮化物膜时 ,为了得到化学配比的膜层 ,薄膜生长表面的反应激活基团、离子等的密度必须足够大 .为此对原有的微波 -ECR等离子体源进行了改造 .研究了双放电腔微波 -ECR等离子体源增强磁控溅射的放电特性 ,并用该方法制备了氮化碳膜 .结果表明 :该方法是一种有效的制备化合物薄膜的技术 ;用该方法制备的氮化碳膜 。
The DC discharge of a planar magnetron was enhanced by twinned microwave electron cyclotron resonance plasma source. The magnetic cusp geometry formed in the processing chamber was used for plasma confinement. The sputtering discharge characteristics were investigated and a combined mode of voltage and current was observed at pressure as low as 0.007 Pa. Carbon nitride thin films were synthesized using this method. Characterization of the films shows that the films were composed of a single amorphous carbon nitride phase with N C atom number ratio close to that of C3N4, and the bonding was mainly of C-N type.
出处
《大连理工大学学报》
EI
CAS
CSCD
北大核心
2001年第3期275-278,共4页
Journal of Dalian University of Technology
基金
国家自然科学基金资助项目! (19835 0 30 )
关键词
磁控溅射
放电特性
氮化碳膜
等离子体源
薄膜制备
沉积
Carbon nitride
Electron cyclotron resonance
Plasma applications
Plasma confinement
Plasma sources
Thin films
