摘要
对甚大规模集成电路 ( ULSI)多层布线中二氧化硅介质的抛光机理、工艺条件选择、抛光液成分与作用等进行了综合分析 ,如何使用化学方法提高抛光速率、改善表面状况以及解决金属离子沾污等问题及发展趋势进行了综述 ,对现存的一些难题提出了改进方案。
The mechanism, the choosing of processing conditions and content and effect of polishing slurry of silica dielectric in ULSI multilevel are analyzed. The way of increasing the polishing rate, improving of the surface condition and avoiding metallic ions by using chemical method is outlined. Projects are suggested to solve the present problems.
出处
《电子器件》
CAS
2001年第2期101-106,共6页
Chinese Journal of Electron Devices
