摘要
作者对当前 ULSI多层布线中金属铜的 CMP技术作了系统的介绍 ,对抛光机理、多层布线中铜图案成型技术、浆料目前的种类及成分和表面完美性问题作了详细地分析和论述 ,并对目前存在问题及解决的方法和发展方向进行了讨论。
The technical of CMP of Cu in ULSI was systematically introduced, with the detailed analysis and summary of polishing mechanism, patterning of Cu for Multilevel metalliztion, types and components of slurry for CMP of Cu, and Cu dishing and SiO\-2 erosion. The questions existing and their solutions and directions of development were discussed.
出处
《电子器件》
CAS
2001年第2期107-112,共6页
Chinese Journal of Electron Devices