摘要
研究了一种双微带结构的 ＧａＡｓ光电导探测器的性能，测量了本征 ＧａＡｓ探测器和经过 １．６ＭｅＶ电子辐照的探测器的ｘ脉冲响应，并对其响应时间，后沿下降时间，半高宽（ＦＷＨＭ）进行对比研究，结果显示经电子辐照后的探测器的性能得到了明显的提高。
The properties of GaAs photoconductor detector with double microstrip structure have been investigated in this paper. Having measured the response to x pulse of GaAs detector before and after I .6MeV electronic radiation, the response time, fall time of trailing edge, full width of half maximum (FWHM) are researched and contrasted. The result of research shows that the properties of GaAs detector irradiated by electron has great improvement.
出处
《半导体技术》
CAS
CSCD
北大核心
2001年第6期37-39,共3页
Semiconductor Technology
