摘要
研制了低阈值电流、高量子效率６７０ｎｍ压缩应变单量子阱ＧａＩｎＰ／ＡｌＧａＩｎＰ脊形波导激光器。测量解理成的激光器条，腔长为３００μｍ时，阈值电流为１２．８ｍＡ，双面外部量子效率之和达到９４．６％。
A low threshold current and high quantum efficiency 670nm GaInP/AlGaInP compressively strained SQW ridge waveguide lasers is developed in this paper. The cleaved laser bar with different laser cavity length is measured. For 300μm cavity length lasers the threshold current was 12.8mA and differential quantum efficiency for two facets reached 94.6%.
出处
《半导体技术》
CAS
CSCD
北大核心
2001年第6期40-41,45,共3页
Semiconductor Technology
