基于GMR及TMR效应的磁随机存储器的最新应用开发

New application and development of the magnetic random access memory based on the GMR and TMR effect

介绍了巨磁电阻（ＧＭＲ）及隧道磁电阻（ＴＭＲ）效应，讨论了计算机磁随机存储器（ＭＲＡＭ）的最新应用开发。

This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.