一种新型的SOI灵敏放大器

A new SOI Sense Amplifier

本文利用“灵巧的体接触 (Smart Body Contact)”技术设计出一种新型的SOI灵敏放大器 .采用Hspice软件对体硅的和新型的交叉耦合灵敏放大器进行模拟和比较 ,发现新型的交叉耦合灵敏放大器比体硅的交叉耦合灵敏放大器延迟时间缩短 30 % ,最小电压分辨可达 0 0 5V .最后 ,我们成功地将该电路应用于CMOS/SOI 6 4KbSRAM电路 ,电路存取时间仅

The paper proposes a new SOI sense amplifier adopting smart body contact technology.Delay time characteristics of the SOI Cross coupling sense amplifier were analyzed by Hspice simulation and compared with conventional silicon Cross coupling sense amplifier,Delay time reduction of the SOI Cross coupling sense amplifier over conventional Cross coupling silicon sense amplifier is about 30%,and voltage differential is 0 05V.Finally,the circuit was adopted successfully in CMOS/SOI 64Kb SRAM with 40ns fast access time.