GaN基HFET的新进展

The Progress of GaN Based HFETs

回顾了氮化镓 ( Ga N)基异质结场效应晶体管 ( HFET)的发展 ,概述了它的直流和微波特性。制作氮化镓基 HFET可以采用不同的器件结构 ,不同的结构有各自的优点 ,对器件性能有很大影响。多数器件采用了其中两种比较成熟的结构 。

The progress in development of GaN based Heterostructure FETs(HFETs)is reviewed.The dc and microwave properties of GaN/AlGaN HFETs are described.GaN HFETs have been fabricated in different structures,which controls the characteristics of these HFETs.Most HFET devices are fabricated in two mature structures.These two device structures have been detailedly discussed.