MOSFET中热载流子效应的计算、实验和模拟

Calculation,Experience and Simulation of Hot carrier Effect in MOSFET′s

亚微米 MOSFET的热载流子效应会引起器件的失效 ,文中分析了热载流子效应引起器件失效的机理和物理模型 ,对该效应的内部电场、衬底电流、阈值电压和跨导作了计算 ;使用知名的集成电路器件模拟软件 ATL AS模拟了该效应 ;并对实际 MOSFET作了 I- V特性曲线和跨导变化量随偏压时间变化的实验测试。理论分析、实验结果与模拟结果都符合得很好。为改善MOSFET热载流子效应而提出的 GOL D结构也获得很好的模拟结果。

Hot-carrier effect in submicrometer MOSFET's would cause device failure. This paper analyses the failure mechanism and physical model of this effect. Theoretical calculations include internal electric field, substrate current, shift of threshold voltage and transconductance. By using the device simulator ATLAS the hot-carrier effect in nMOSFETs is simulated. We have also completed the experimental tests on nMOSFET I-V characteristics and the relative change of maximum transconductance with stress-time. The simulation results agree well with the theoretical analyses and experimental data. The simulated performance of a proposed new device structure GOLD is satisfactory.