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用于铁电存储器的PZT薄膜的制备与性能 被引量:3

Properties of PZT Thin Films Prepared by MOD Method for Ferroelectric Memories
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摘要 采用 MOD方法制得了具有纯钙钛矿结构和良好铁电性能的 PZT薄膜 ,典型 Pr、Ps、Ec值分别为 2 7μC/ cm2、4 4 μC/ cm2、10 .9k V/ mm,进一步分析表明 ,制备工艺对薄膜的析晶状态、晶粒尺寸和铁电性能有重大影响 ,析晶充分和大晶粒尺寸有利于获得较大的 The MOD method was employed to prepare PZT thin film with pure perovskite phase and good ferroelectric properties. The typical values of Pr、Ps、Ec were 27 μC/cm 2、44 μC/cm 2、10.9 kV/mm respectively. The further analysis indicated that sufficient crystallization and large grain size were benefical to obtain large P r values.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2001年第2期234-238,共5页 Research & Progress of SSE
基金 国家自然科学基金项目! (6 9876 0 0 8) AM基金项目 "86 3"项目资助
关键词 锆钛酸铅 铁电体 性能 铁电存储器 PZT薄膜 PZT thin film ferroelectrics
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