摘要
对PECVD生长氮化硅介质膜的工艺条件进行了实验研究 ,获得了生长氮化硅介质膜的最佳工艺条件 ,制作出了高质量的氮化硅介质膜。对样品进行了湿法腐蚀和超声实验 ,在显微镜下观察无膜脱落现象发生。阐述了几种工艺参数对介质膜生长的影响。
Research on growth technology for Si 3N 4 thin film by PECVD is carried out experimentally.Optimum process condition is obtained,and high quality Si 3N 4 thin film is successfully developed. Through wet etching and ultrasonic experiment ,no film falling is observed with microscope.Effect of some process parameters on the growth of the film is described.
出处
《半导体光电》
CAS
CSCD
北大核心
2001年第3期201-203,217,共4页
Semiconductor Optoelectronics
